CVD Process

Plasma Enhanced CVD

PECVD

Plasma-enhanced chemical vapor deposition is a plasma-based deposition method used to deposit material on a substrate surface. PECVD is commonly used for depositing silicon oxide/nitride, hydrogenated amorphous and microcrystalline silicon and carbon, Diamond-like carbon (DLC), semiconductors and oxides. The process involves introducing a gas mixture into the vacuum chamber, where a plasma is generated. The process gases are ionized and decomposed into ions and radicals, which react with the substrate via chemical reactions, leading to the deposition of a thin film on the substrate. The plasma can be generated using different methods such as radio frequency (RF), alternating current (AC), or direct current (DC) discharge between two electrodes. PECVD offers a higher deposition rate while maintaining a lower temperature compared to thermal CVD

Applications

PECVD is used to produce high-quality semiconductor and dielectric films required for
various applications, like low and high-power semiconductor devices, photovoltaic solar
cells’ active layers, metal-insulator-metal (MIM) capacitors, laser diodes, sensors, detectors, LEDs, thin film transistors, and more.

Consumer Electronics
Automotive Industry
Solar energy
Aerospace and Defence
Healthcare and medical devices
Optics and Photonics
Wear resistant coatings

Key features

RF showerhead electrode for uniform electric field and gas distribution
Modular process gas manifold with mass flow controllers for up to 12 gases
Optional vapor source controller for liquid Precursor (i.e. TEOS) with tank/cylinder in a closed cabinet for safe refill
Automatic process pressure control
Alternatively Hot Wire CVD
In situ spectroscopic plasma monitoring
Optional automatic or manual load lock (optional pre-heating and/ or plasma treatments)
Optional wide range optical thickness monitor for the control of layer thickness
Optional in situ spectroscopic ellipsometry for thickness measurement