Paolo Rava

1) W.Walukiewicz, J.Lagowski, L.Jastrzebski, P. Rava, M.Lichtensteiger, C.H.Gatos, H.C.Gatos.
“Electron mobility and free carrier absorption in InP; determination of the compensation ratio”. Journal of Applied Physics 51, (5), 2659, New York (May 1980).

2) P. Rava, H.C.Gatos, J.Lagowski.
“Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscale”.
Applied Physics Letters 38, (4), 274, New York (15 Feb.1981).

3) P. Rava, H.C.Gatos, J.Lagowski.
“Thermally activated oxygen donors in Si”.
Journal of the Electrochemical Society 129, (12), 2844, Pennington, New Jersey, (December 1982).

4) F.Demichelis, P. Rava, A.Tagliaferro, E.Tresso.
“Magnetron sputtered amorphous silicon”.
Journal of Applied Physics 57 (12), 5424, New York (1985).

5) F.Demichelis, E.Mezzetti, P. Rava, A.Tagliaferro, E.Tresso, G.A.DellaMea, P.Mazzoldi. “Influence of the hydrogen content on the physical properties of magnetron sputtered amorphous silicon”.
Journal of Non-Crystalline Solids 77/78, 269, North Holland, Amsterdam (1985).

6) F.Demichelis, E.Minetti-Mezzetti, A.Tagliaferro, E.Tresso, P. Rava, N.M.Ravindra. “Optical properties of hydrogenated amorphous silicon”.
Journal of Applied Physics 59, (2), 611,New York (1986).

7) F.Demichelis, E.Minetti-Mezzetti, A.Tagliaferro, E.Tresso, P. Rava, G.A.DellaMea, P.Mazzoldi.
“Correlation between physical properties and hydrogen concentration in magnetron sputtered amorphous silicon”.
Physical Review B33 (10), 7022,New York (1986).

8) P.Mpawenayo, F.Demichelis, P. Rava, A.Tagliaferro, E.Tresso, G.Kaniadakis.
“Semiconductor properties of amorphous C-Sn thin films”.
Thin Solid Films 146, L19, Elsevier Sequoia, The Netherlands (1987).

9) P. Rava, F.Demichelis, G.Kaniadakis, P.Mpawenayo, A.Tagliaferro, E.Tresso.
“Influence of thickness and hydrogen concentration on optical and electrical properties of a-Si:H thin films”.
Journal of Vacuum Science and Technology A5 (4), 1795, New York, (July-August 1987).

10) F.Demichelis, G.Kaniadakis, E.Mezzetti, P.Mpawenayo, A.Tagliaferro, E.Tresso, P. Rava, G.DellaMea.
“Influence of film thickness on optical and electrical properties of hydrogenated amorphous silicon”.
Thin Solid Films 150, 1, Elsevier Sequoia, The Netherlands (1987).

11) F.Demichelis, G,Kaniadakis, P.Mpawenayo, M.A.Perino, A.Tagliaferro, E.Tresso, P. Rava, G.DellaMea, M.Vallino.
“Structure and optical properties of hydrogenated amorphous carbon-tin alloys prepared using the sputter-assisted plasma chemical deposition technique”.
Thin Solid Films 150, 189, Elsevier Sequoia, The Netherlands (1987).

12) F.Demichelis, G.Kaniadakis, E.Mezzetti, P.Mpawenayo, A.Tagliaferro, E.Tresso, P. Rava, G.DellaMea.
“Physical properties and structure of a-Si1-x Cx:H alloy films”.
Il Nuovo Cimento 9D, (4), 393, Aprile 1987.

13) F.Demichelis, M.Fanciulli, G.Kaniadakis, A.Tagliaferro, E.Tresso, P. Rava, E.Giamello. “Investigation on physical properties and structure of amorphous hydrogenated carbon films”. Journal of Non-Crystalline Solids 101, 179, North Holland, Amsterdam (1988).

14) F.Demichelis, G.Kaniadakis, A.Tagliaferro, E.Tresso, P. Rava.
“Amorphous hydrogenated silicon-carbon-tin alloy films”.
Physical Review B37, (3), 1231, New York (1988).

15) F.Demichelis, G.Kaniadakis, A.Tagliaferro, E.Tresso, P. Rava, G.DellaMea.
“Recent progress in studies of a-CSiSn:H alloys”.
Journal of Applied Physics 64, 721, New York (1988).

16) P. Rava, M.A.Perino,C.F.Pirri, R.Galloni, A.Carnera.
“Optical and compositional properties of a-Si:H/transparent conductive oxide interfaces”.
Journal of Vacuum Science and Technology A7, (3), 1318, New York (May-June 1989).

17) G.Moersch, P. Rava, F.Schwarz, A.Paccagnella.
“Thin-film transistors with sputtered CdSe as semiconductor”.
IEEE Transactions on Electron Devices 36, (2), 449, New York (February 1989).

18) A.Carbone, F.Demichelis, G.Kaniadakis, G.DellaMea, F.Freire, P. Rava.
“Physical properties of amorphous silicon-carbon alloys produced by different techniques”.
Journal of Materials Research 5, (12), 2877, Materials Research Society, Pittsburgh (PA) (1990).

19) F.Demichelis, C.F.Pirri, E.Tresso, G.DellaMea, V.Rigato, P. Rava.
“Physical properties of undoped and doped hydrogenated amorphous silicon carbide”.
Semiconductor Science and Technology 6, 1141-1146, IOP Publishing Ltd., London (1991).

20) G.DellaMea, F.Demichelis, C.F.Pirri, P. Rava, V.Rigato, T.Stapinski, E.Tresso.
“Influence of hydrogen on the evolution of structural properties of amorphous silicon carbide”. Journal of Non-Crystalline Solids 137/138, 95-98, North Holland, Amsterdam (1991)

21) T.Pisarkiewicz, T.Stapinski, H.Czternastek, P. Rava.
“Inhomogeneity of amorphous silicon thin films from optical transmission and reflection measurements”.
Journal of Non-Crystalline Solids 137/138, 619-622, North Holland, Amsterdam (1991)

22) A.Madan, P. Rava, R.E.I.Schropp, B.Von Roedern.
“A new modular multichamber Plasma Enhanced Chemical Vapor Deposition system”.
Applied Surface Science 70/71, 716-721, North-Holland (1993).

23) F. Demichelis, G. Crovini, F. Giorgis, C.F. Pirri, E. Tresso, G. Amato, H. Herremans, W. Grevendonk, P. Rava.
“Electronic density of states in a-SiC:H films”
Journal of Non-Crystalline Solids 164/166, 1015, (1993).

24) F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, G. Amato, U. Coscia, G.Ambrosone, P. Rava.
“Optimization of a-Si1-xCx:H films prepared by ultra high vacuum plasma enhanced chemical vapour deposition for electroluminescent devices “.
Thin Solid Films 241, 274, Elsevier Sequoia (1994).

25) F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, F. Zignani, P. Rava, A. Madan.
“The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films” (Invited paper)
Philosophical Magazine B69, 377, (1994).

26) F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, P. Rava.
“Optimization of relevant deposition parameters for high quality a-SiC:H films”.
Solar Energy Materials and Solar Cells 37, 315, Elsevier Science (1995)

27) F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, R. Galloni, C. Summonte, R. Rizzoli, F. Zignani, P. Rava.
“Boron and phosphorous doping of a-SiC:H thin films by means of ion implantation”.
Thin Solid Films 265, 113, Elsevier Sequoia (1995)

28) P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C.Summonte.
“Power dissipation in PECVD for SiH4-CH4-H2 gas mixtures”.
Journal de Physique IV, Colloque C5, suppl. Journal de Physique II, edt. by G.A.Battiston, R. Gerbasi, M. Porchia, vol.5, p. C5-1125, Les Editions de Physique, Les Ulis Cedex (1995)

29) P. Tiberto, F. Vinai, P. Allia, P. Rava
“Room temperature giant magnetoresistance of melt-spun ribbons and thin films of granular
Cu1-xCox
Materials Science Forum 195, 203-208 (1995)

30) F. Giorgis, P. Rava, R. Galloni, R. Rizzoli, C. Summonte, G. Crovini, F.Demichelis, C.F. Pirri, E. Tresso, V. Rigato.
” Compositional, optoelectronic and structural properties of amorphous hydrogenated silicon-nitrogen alloys deposited by plasma enhanced chemical vapour deposition”.
Journal of Non-Crystalline Solids 198-200, 596-600, Elsevier (1996)

31) M. Fathallah, R. Gharbi, G. Crovini, F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, P. Rava.
“Light soaking in a-SiC:H films grown by PECVD in undiluted and hydrogen diluted SiH4+CH4 gas mixtures”.
Journal of Non-Crystalline Solids 198-200, 490-494, Elsevier (1996)

32) U. Coscia, G. Ambrosone, S. Catalanotti, P. Rava, G. Crovini, F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, V. Rigato
“Effects of power density and molecule dwell time on compositional, structural and optoelectronic properties of a-SiC:H alloys”.
Solid State Communications, vol.98, no.7, p.617, Pergamon Press, Elsevier Science (1996).

33) P. Rava, G. Crovini, F. Demichelis, F. Giorgis, C.F. Pirri.
“Characterization of the effect of growth conditions on a-SiC:H films”.
Journal of Applied Physics 80, no.7, 4116, (October 1996)

34) G. Fusco, F. Giorgis, C.F. Pirri, A. Tagliaferro, E. Tresso, C. De Martino, P. Rava
“ Study of physical properties of boron nitride and carbon nitride films grown by sputtering ”.
Defect and Diffusion Forum, Part A of Diffusion and Defect Data, Vols. 134-135, 3-14, Scitec (Switzerland, 1996)

35) F. Giorgis, C.F. Pirri, P. Rava, V. Rigato, E. Tresso, S. Zandolin
“Wide band gap amorphous silicon based semiconductors”
Physica B, 229, 233-239, (1997)

36) A. Desalvo, F. Giorgis, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, P. Rava.
“Optoelectronic properties, defect structure and composition of a-SiC:H films grown in undiluted and H2 diluted silane-methane plasma”.
Journal of Applied Physics 81, 7973 (1997)

37) F. Giorgis, C.F. Pirri, P. Rava, E. Tresso
“Correlation between optoelectronic properties and structure of a-SiC:H films grown from C2H2 source”
Phil. Mag. B, 75, no.4, 471-483, (July 1997)

38) F. Giorgis, C.F. Pirri, E. Tresso. P. Rava
“a-SiC:H films deposited by PECVD from silane + acetylene and silane + acetylene + hydrogen gas mixtures”.
Diamond and Related Materials 6, 1606 (1997)

39) F. Giorgis, F. Giuliani, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, A. Desalvo, P. Rava
“Optical, electrical and structural properties of device quality a-SiN:H films deposited by plasma enhanced chemical vapour deposition ”.
Phil. Mag. B, 77, no.4, 925-944, (1998)

40) F. Giorgis, F. Giuliani, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, A. Desalvo, P. Rava
“Photoluminescence and electroluminescence properties of a-SixN1-x:H based superlattice structures”.
Journal of Non-Crystalline Solids, 227-230, 1127-1131, Elsevier (1998)

41) P. Mandracci, M.L. Rastello, P. Rava, F. Giuliani, F. Giorgis
“ Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector”
Thin Solid Films 337, 232, Elsevier Sequoia (1999)

42) R. Rizzoli, C. Summonte, P. Rava, G. Barucca, A. Desalvo, F. Giorgis.
“ a-SiN:H multilayers versus bulk structure: a real improvement of radiative efficiency? “.
Journal of Non-Crystalline Solids 226-269, 1062-1066, Elsevier (2000)

1) P. Rava, H.C.Gatos, J.Lagowski.
“Activation of the oxygen donor in Si on a microscale”.
Semiconductor Silicon 1981, p.232, The Electrochemical Society Softbound Proceedings Series, Pennington, New Jersey (May 1981).

2) M.Gasparini, C.Calligarich, P. Rava, L.Sardi, M.Alessandri, F.Redaelli, S.Pizzini.
“Advanced crystallization techniques of solar grade silicon”.
Proceedings of the 16th IEEE Photovoltaic Specialists Conference, San Diego, The Institute of Electrical and Electronics Engineers, New York (1982).

3) F.Demichelis, E.Mezzetti, P.Mpawenayo, A.Tagliaferro, E.Tresso, S.Bourquard, P. Rava, G.Della Mea, P.Mazzoldi.
“Thickness dependence of optical and electrical properties of thin a-Si:H films”.
Materials Issues in Amorphous Semiconductor Technology-1986; D.Adler, Y.Hamakawa, A.Madan Editors, Materials Research Society Symposium Proceedings, vol 70, p.191, Pittsburgh (PA) (1986).

4) F.Demichelis, G.Kaniadakis, P.Mpawenayo, E.Tresso, A.Tagliaferro, P. Rava.
“Fluorination effects on the structural and optical properties of carbon-tin amorphous alloys”. Proceedings of the European Materials Research Society 1987 Meeting, Symposium C on Amorphous Hydrogenated Carbon Films, Strasbourg, Vol.XV, p.659 Strasbourg; A.Golanski, V.T.Nguyen, E.F.Krimmel Editors, Les Ed. De Phys. (Paris)(June 1987).

5) F.Demichelis, M.Fanciulli, G.Kaniadakis, E.Tresso, G.Della Mea, A.Paccagnella, A.Tagliaferro, P. Rava, E.Giamello.
“Bonding and structure of amorphous hydrogenated carbon films”.
Proceedings of the European Materials Research Society 1987 Meeting, Symposium C on Amorphous Hydrogenated Carbon Films, Strasbourg, Vol. XVII, pg.213; P.Koidl, P.Oelhafen Editors, Les Ed. de Phys. (Paris)(June 1987).

6) F.Demichelis, C.F.Pirri, E.Tresso, G.Della Mea, V.Rigato, P. Rava.
“Physical properties of undoped and doped microcrystalline SiC:H deposited by PECVD”.
Amorphous Silicon Technology- 1991; A.Madan, Y.Hamakawa, M.Thompson, P.C.Taylor and P.G.LeComber Editors, Materials Research Society Symposium Proceedings, vol 219, p.413, Pittsburgh (PA) (1991)

7) F.Demichelis, C.F.Pirri, E.Tresso, G.Della Mea, V.Rigato, P. Rava, G.Amato.
“a-SiC:H doped with reactive gases and with ion implantation”.
Amorphous Silicon Technology- 1991; A.Madan, Y.Hamakawa, M.Thompson, P.C.Taylor and P.G.LeComber Editors, Materials Research Society Symposium Proceedings, vol 219, p.793, Pittsburgh (PA) (1991)

8) F.Demichelis, P. Rava, A.Tagliaferro.
“Correlation between amorphous silicon solar cell parameters and photoinduced current noise power spectrum”.
Amorphous Silicon Technology- 1991; A.Madan, Y.Hamakawa, M.Thompson, P.C.Taylor and P.G.LeComber Editors, Materials Research Society Symposium Proceedings, vol 219, p.241, Pittsburgh (PA) (1991)

9) F.Demichelis, C.F.Pirri, E.Tresso, P. Rava.
“Doped amorphous and microcrystalline silicon carbide as wide band gap material”.
Wide Band Gap Semiconductors; T.D. Moustakas, J.I. Pankove, Y. Hamakawa Editors Materials Research Society Symposium Proceedings, vol 242, p. 675, Pittsburgh (PA) (1992)

10) F.Demichelis, R.Galloni, A.Madan, C.F.Pirri, P. Rava, M.Ruth, R.E.I.Schropp, C.Summonte, E.Tresso.
“Effect of plasma treatment of the TCO on a-Si solar cell performance”
Amorphous Silicon Technology-1992; M.Thompson, Y.Hamakawa, P.G.LeComber, A.Madan,
E.A.Schiff Editors, Materials Research Society Symposium Proceedings, vol 258, p.905, Pittsburgh (PA) (1992)

11) F. Demichelis, C.F. Pirri, E. Tresso, P. Rava, M. Ferraris, G. DellaMea, V. Rigato, A. Quaranta
“Influence of carbon on structural, optical and electrical properties of microcrystalline silicon carbide”
Amorphous Silicon Technology-1992; M.Thompson, Y.Hamakawa, P.G.LeComber, A.Madan,
E.A.Schiff Editors, Materials Research Society Symposium Proceedings, vol 258, p.607, Pittsburgh (PA) (1992)

12) F. Demichelis, G. Crovini, C. Osenga, C.F. Pirri, E. Tresso, L. Boarino, P. Rava.
“Correlation between crystallinity and structural-optoelectronic properties of c-SiC:H”.
Vuoto Scienza e Tecnologia, Pàtron (Bologna), XII, 102 (1992)

13) J. Daey Owens, R.E.I. Schropp, C.H.M. van der Werf, M.B. von der Linden, C.H.M. Maree, W.F. van der Weg, P. Rava, F. Demichelis, C.F. Pirri, E. Tresso.
“Effects of electrode spacing and hydrogen dilution on a-SiC:H and a-Si:H layers”.
Amorphous Silicon Technology-1993; E.A. Schiff, M.J. Thompson, A. Madan, K. Tanaka, P.G. LeComber Editors, Materials Research Society Symposium Proceedings, vol.297, p.61, Pittsburgh (PA) (1993)

14) T. Pisarkiewicz, T. Stapinski, F. Demichelis, C.F. Pirri, E. Tresso, P. Rava.
” Investigation of Hall effect in undoped and phosphorus doped SiC:H films “.
Amorphous Silicon Technology-1993; E.A. Schiff, M.J. Thompson, A. Madan, K. Tanaka, P.G. LeComber Editors, Materials Research Society Symposium Proceedings , vol.297, p.431, Pittsburgh (PA) (1993)

15) F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, F. Zignani, G. Amato, P. Rava, A. Madan.
“Optimization of optoelectronic properties of a-SiC:H films”.
Amorphous Silicon Technology-1993; E.A. Schiff, M.J. Thompson, A. Madan, K. Tanaka, P.G. LeComber Editors, Materials Research Society Symposium Proceedings, vol.297, p.681, Pittsburgh (PA) (1993)

16) F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, L. Battezzati, P. Rava.
“Structure and morphology of -SiC:H films produced by PECVD”.
Microcrystalline Semiconductors: Materials Science and Devices; F.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu and Y. Aoyagi Editors, Materials Research Society Symposium Proceedings, vol.283, p.543, Pittsburgh (PA) (1993)

17) F. Demichelis, G. Crovini, C.F. Pirri, E. Tresso, P. Rava.
“Study of amorphous and microcrystalline hydrogenated silicon carbon alloys deposited by PECVD”.
Vuoto Scienza e Tecnologia XXIII, 91, Pàtron (Bologna), (1994).

18) R. Galloni, R. Rizzoli, C. Summonte, F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, G. Ambrosone, C. Catalanotti, U. Coscia, P. Rava, G. Della Mea, V. Rigato, A. Madan.
“Defect distribution and bonding structure in high band gap a-Si1-xCx:H films deposited in H2 dilution”.
Amorphous Silicon Technology-1994 ; E.A. Schiff, M. Hack, A. Madan, M. Powell, A. Matsuda Editors, Materials Research Society Symposium Proceedings, vol 336, p.517, Pittsburgh (PA), (1994)

19) R. Rizzoli, R. Galloni, C. Summonte, F. Demichelis, C.F. Pirri, E. Tresso, G. Crovini, P. Rava, F. Zignani.
“Boron and phosphorous ion implantation in a-SixC1-x:H thin films”.
Amorphous Silicon Technology-1994; E.A. Schiff, M. Hack, A. Madan, M. Powell, A. Matsuda Editors, Materials Research Society Symposium Proceedings, vol 336, Pittsburgh (PA) (1994)

20) R. Rizzoli, C. Summonte, R. Galloni, M. Ruth, A. Desalvo, F. Zignani, P. Rava, F. Demichelis, C.F. Pirri, E. Tresso, G. Crovini, F.Giorgis, A. Madan.
“Brightness degradation controlled by current induced metastable defect creation in a-SiC:H based light emitting diodes”
Amorphous Silicon Technology-1995, M. Hack, E.A. Schiff, A. Madan, M. Powell, A. Matsuda Editors, Materials Research Society Symposium Proceedings, vol 377, p.809, Pittsburgh (PA) (1995)

21) F. Demichelis, G. Crovini, F. Giorgis, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, F. Zignani, P. Rava.
“High quality a-SiC:H films and their application in p-i-n structures for optoelectronic devices”.
Vuoto Scienza e Tecnologia XXIV, 61, Pàtron (Bologna), (1995).

22) U. Coscia, G. Ambrosone, C. Catalanotti, F. Demichelis, F. Giorgis, C.F. Pirri, E. Tresso, P. Rava
“Study of gap states and photoelectrical properties of a-SiC:H films deposited by PECVD in SiH4+CH4 gas mixtures”.
Vuoto Scienza e Tecnologia XXV, 38, Pàtron (Bologna), (1996).

23) F. Demichelis, G. Crovini, F. Giorgis, C.F. Pirri, E. Tresso, F. DeZan, G. DellaMea, V. Rigato, P. Rava.
“Optimization of a-SiC:H films for optoelectronic applications”.
Vuoto Scienza e Tecnologia XXV, 44, Pàtron (Bologna), (1996).

24) F. Zignani, R. Galloni, R. Rizzoli, M. Ruth, C. Summonte, R. Pinghini, Q.Zini, P. Rava, A. Madan, Y.S. Tsuo.
“Study of a-Si:H/c-Si Heterojunctions for PV applications”.
Amorphous Silicon Technology-1996, M. Hack, E.A. Schiff, S. Wagner, A. Matsuda, R. Schropp Editors, Materials Research Society Symposium Proceedings, vol. 420, pg. 45, Pittsburgh (PA) (1996)

25) F. Demichelis, C.F. Pirri, E. Tresso, F. Giorgis, C. Appiano, R. Antolini, P. Rava.
“Study of antiabrasive boron nitride and titanium nitride coatings deposited by RF magnetron sputtering on glass and plastic”.
“29th International Symposium on Advanced Transportation Applications” Proceedings of the Dedicated Conference on Glass Technologies in the Automotive Industries, Glass Technologies I – Base glass (Published by Automotive Automation Limited, Croydon, England, 1996) p. 1321

26) F. Giorgis, G. Crovini, G. D’Agnelli, F. Demichelis, F. DeZan, C.F. Pirri, P. Rava, E. Tresso.
“Structural and optoelectronic properties of a-SiC:H and a-SiN:H films for applications as wide band gap semiconductors”.
Vuoto Scienza e Tecnologia, Pàtron (Bologna) (in press, 1997)

27) F. Giorgis, C. Appiano, G. Crovini, F. Demichelis, G. Mina, C.F. Pirri, P. Rava, E. Tresso.
“Deposition and characterization of boron nitride films grown by sputtering”.
Vuoto Scienza e Tecnologia, Pàtron (Bologna) (in press, 1997)

28) F.Giorgis, F. Giuliani, C.F. Pirri, E. Tresso, R. Galloni, R. Rizzoli, C. Summonte, A. Desalvo, F. Zignani, P. Rava, F. Caccavale.
“Photoluminescence and optical characterization of a-SixN1-x:H based multilayers grown by PECVD”.
Amorphous Silicon Technology-1997, S. Wagner, M. Hack, E.A. Schiff, , R. Schropp, I. Shimizu Editors, Materials Research Society Symposium Proceedings, vol.467, ) p. 489, Pittsburgh (PA) (1997)

29) R. Rizzoli, R. Galloni, C. Summonte, R. Pinghini, E. Centurioni, F. Zignani, A. Desalvo, P. Rava, A. Madan
“Study of a-Si:H/c-Si Heterojunctions for PV applications”.
Amorphous Silicon Technology-1997, S. Wagner, M. Hack, E.A. Schiff, , R. Schropp, I. Shimizu Editors, Materials Research Society Symposium Proceedings, vol.467, p.807, Pittsburgh (PA) (1997)

30) F. Giorgis, F. Giuliani, C.F. Pirri, P. Mandracci, P. Rava, R. Reitano, L. Calcagno, P. Musumeci.
” Carbon rich a-Si1-xCx:H films: an investigation on radiative recombination properties”
Amorphous Silicon Technology-1998, S. Wagner, M. Hack, E.A. Schiff, , R. Schropp, I. Shimizu Editors, Materials Research Society Symposium Proceedings, Pittsburgh (PA) (1998)

31) S. Jonas, P. Rava T. Stapinski, E. Walasek.
” UHV plasma enhanced CVD system for preparation of new generation amorphous silicon based efficient solar cells “.
Opto-Electronics Review , vol.9, (1) p.91-95, (2001)

1) R.Malvano, P. Rava.
“Studi ottici di un secondo regime di scattering dinamico nell’MBBA”.
Atti dell’Accademia delle Scienze di Torino, 110, 225 (1976).

2) D.P.Almond, J.A.Rayne, P. Rava
“An electronic study of electron mean free paths in molybdenum and tungsten”
Proceedings of the Institute of Acoustics, 6-7-1 to 6-7-3, Spring Conference, London (1975).

3) H.C.Gatos, P. Rava, J.Lagowski.
“Distribution of oxygen in silicon and its effects on electronic characteristics on a microscale”.
Space Photovoltaic Research and Technology 1980, Nasa Conference Publication 2169.

4) P. Rava.
“Influenza della microdistribuzione di ossigeno nel silicio sulla conversione fotovoltaica dell’energia solare”.
Conversione fotovoltaica dell’energia solare, p.179, Associazione Elettrotecnica ed Elettronica Italiana, Milano, 4-5 Giugno 1981.

5) S.Pizzini, C.Calligarich, C.Chemelli, M.Gasparini, P. Rava, L.Sardi.
“Influence of iron, titanium and zirconium on photovoltaic behavior of polycristalline solar cells”.
Proceedings of the Symposium on Materials and New Processing Technologies for Photovoltaics, The Electrochemical Society, Pennington, New Jersey (May 1983).

6) F.Demichelis, E.Minetti-Mezzetti, P. Rava, A.Tagliaferro, E.Tresso.
“Proprietès optiques des structures au silicium amorphe deposeès par pulverisation cathodique”.
IVième seminaire sur l’energie solaire (Trieste 1984), pg.267 (M.Cadène Ed., USTL Publ., Montpellier)

7) F.Demichelis, E.Minetti-Mezzetti, P. Rava, A.Tagliaferro, E.Tresso.
“Properties of a-Si:H produced by sputtering with different hydrogen content”.
Proceedings of the 6th E.C. Photovoltaic Solar Energy Conference, pg.702, London; W.Palz, F.C.Treble Editors, D.Reidel Publishing Co, Dordrecht (Holland),(1985).

8) S.Bourquard, F.Demichelis, E.Mezzetti, P. Rava, A.Tagliaferro, E.Tresso.
“A comparative study of glow discharge and RF magnetron sputtered a-Si:H”.
Proceedings IX AIV Meeting, Firenze (1985).

9) F.Demichelis, E.Mezzetti, P. Rava, P.L.Stanghellini, A.Tagliaferro, E.Tresso.
“Infrared spectra of magnetron sputtered amorphous silicon”
Proceedings IX AIV Meeting, Firenze (1985).

10) F.Demichelis, G.Kaniadakis, E.Mezzetti, A.Tagliaferro, E.Tresso, P. Rava.
“Optical constants of individual films in multilayers”.
Proceedings of the Society of Photo-Optical Instrumentation Engineers, vol.652, Thin Film Technologies II, pg.179, Bellingham, WA 98227-0010 (USA), (1986).

11) S.Bourquard, F.Demichelis, E.Mezzetti, P.Mpawenayo, P. Rava, A.Tagliaferro, E.Tresso
“A comparative study of glow discharge and RF magnetron sputtered a-Si:H”.
Journal of the Electrochemical Society vol 133, no.3, pg.113c, Pennington, New Jersey (May 1986).

12) F.Demichelis, G.Kaniadakis, E.Mezzetti, P.Mpawenayo, A.Tagliaferro, E.Tresso, S.Bourquard, G.DellaMea, P. Rava.
“Correlation between physical properties and structure of amorphous silicon carbide films prepared by glow discharge”.
Proceedings of the 2nd International Photovoltaic Science and Engineering Conference, Bejing, China, pg.452; Yu Pei Nuo Editor, Adfield Advertising Co., Hong Kong (1986).

13) F.Demichelis, G.Kaniadakis, P.Mpawenayo, M.A.Perino, A.Tagliaferro, E.Tresso, P. Rava, G.DellaMea, M.Vallino.
“Structure and optical properties of hydrogenated amorphous carbon-tin (a-C:Sn:H) alloys prepared by sputter-assisted plasma chemical deposition technique”.
Proceedings of the 7th E.C. Photovoltaic Solar Energy Conference, Sevilla, pg.594; A.Goetzberger, W.Palz, G.Willeke Editors, D.Reidel Publishing Co., Dordrecht (Holland) (1986).

14) F.Demichelis, G.Kaniadakis, A.Tagliaferro, E.Tresso, P. Rava.
“Properties and structure of hydrogenated carbon-silicon-germanium alloy”.
Technical Digest of the 3rd International Photovoltaic Science and Engineering Conference, Tokyo, Japan, pg.313, Nov.3-6 1987.

15) P. Rava, M.A.Perino, F.Demichelis, G.Kaniadakis, E.Tresso, A.Licciardello, G.Marletta, S.Pignataro, A.Tagliaferro.
“Surface and interface chemical analysis and optical properties of amorphous hydrogenated silicon/Transparent-Conducting-Oxide structures”.
Thin Solid Films 614, pg.529, Elsevier Sequoia, The Netherlands (1988).

16) F.Demichelis, G.Kaniadakis, E. Tresso, A.Tagliaferro, P. Rava.
“a-CSiSn:H and a-CSiGe:H alloys”.
Proceedings of the 8th E.C. Photovoltaic Solar Energy Conference, Firenze, pg.981; I.Solomon, B.Equer, P.Helm Editors, Kluwer Academic Publishing Co., Dordrecht (Holland) (1988).

17) F.Demichelis, G.Kaniadakis, E.Tresso, G.Marletta, S.Pignataro, P. Rava.
“Chemical and physical behaviour of a-Si:H/TCO interface”.
Proceedings of the First International Symposium on Physics and Applications of Amorphous Semiconductors, Torino, pg.278, World Scientific Publishing Co., Singapore (1988).

18) F.Demichelis, G.Kaniadakis, C.Pirri, A.Tagliaferro, E.Tresso, G.Benedetto, P. Rava, C.R.Wronski.
“Amorphous silicon carbide thin films produced by different techniques”.
Proceedings of the 9th E.C. Photovoltaic Solar Energy Conference, Freiburg; I.Solomon, B.Equer, P.Helm Editors, Kluwer Academic Publishing Co., Dordrecht (Holland) (1989).

19) F.Demichelis, C.F.Pirri, E.Tresso, G.Amato, G.DellaMea, V.Rigato, P. Rava.
“Characterization of undoped and doped amorphous silicon carbide”.
Technical Digest of the 5th International Photovoltaic Science and Engineering Conference, p.845, Kyoto, Japan (1990).

20) E.Rava, P. Rava
“Pompe turbomolecolari per alto vuoto: storia, principio di funzionamento e applicazioni”.
“Mezzo secolo di fisica per gli ingegneri”, pg.77, CELID, Torino (Novembre 1990).

21) P. Rava.
“A review of plasma assisted chemical vapour deposition processes and technologies”.
Current Trends in Crystal Growth and Characterization, p.499, edited by K.Byrappa, M.I.T. Associates Pvt. Ltd., Bangalore (India) (1991).

22) R.Galloni, B.Passerini, M.A.Perino, F.Pirri, P. Rava, M.Ruth.
“Light induced degradation and bond breaking in a-Si:H films and solar cells”.
Current Trends in Crystal Growth and Characterization, p.530, edited by K.Byrappa, M.I.T. Associates Pvt. Ltd., Bangalore (India) (1991).

23) F.Demichelis, C.F.Pirri, E.Tresso, T.Stapinski, L.Boarino, P. Rava
“A comparison between fluorinated and hydrogenated amorphous silicon carbide prepared by reactive sputtering”.
Proceedings of the 10th E.C. Photovoltaic Solar Energy Conference, p.121, Lisbon, April 1991; Kluwer Academic Publishing Co., Dordrecht (Holland) (1991).

24) F.Demichelis, C.F.Pirri, E.Tresso, R.Galloni, P. Rava, R.Dusane.
“Amorphous hydrogenated silicon carbide p-doped by ion implantation and by gas phase”.
Proceedings of the 6th International Photovoltaic Science and Engineering Conference, p.649, New Delhi, India (1992).

25) P. Rava.
“Thin semiconducting films deposited by plasma chemical vapour: deposition technology and applications”.
“Trends in Vacuum Science and Technology”, 1, 381, Research Trends, Council of Scientific Research Integration, Trivandrum, India (1993)

26) R. Rizzoli, R. Galloni, C. Summonte, F. Demichelis, C.F. Pirri, E. Tresso, G. Crovini, P. Rava, A. Madan
“Recent improvements on a-SiC:H films deposited by UHV-PECVD”.
Proceedings of the 12th E.C. Photovoltaic Solar Energy Conference, Amsterdam, April 1994, p.366; H.S. Stephens and Associates, Bedford, UK, (1994).

27) F. Zignani, R. Galloni, R. Rizzoli, C. Summonte, A. Parisini, A. Armigliato, P. Rava.
“Studio della eterogiunzione silicio amorfo\silicio cristallino e sua applicazione alla realizzazzione di celle solari”
Atti II Convegno Scientifico Consorzio Interuniversitario Nazionale per la Chimica dei Materiali, Firenze, Febbraio 1995

28) C. Summonte, R. Rizzoli, R. Galloni, R. Pinghini, E. Centurioni, C.F. Pirri, E. Tresso, F. Demichelis, G. Crovini, F. Giorgis, P. Rava.
“Study of amorphous hydrogenated silicon nitrogen alloys for photovoltaic applications”.
Proceedings of the 13th E.C. Photovoltaic Solar Energy Conference, pg. 199, Nice, October 1995, H.S. Stephens and Associates, Bedford, UK, (1995).

29) P. Rava, F. Giuliani, F. Giorgis, C.F. Pirri, E. Tresso, P. Mandracci, C. Summonte, R. Rizzoli, A. Desalvo.
“Amorphous silicon nitrogen alloys deposited by PECVD under hydrogen dilution conditions”.
Physics of Semiconductor Devices, V. Kumar and S.K. Agarwal (Eds.), Narosa Publishing House, New Delhi, India (1998)

30) R. Rizzoli, C. Summonte, R. Galloni, A. Desalvo, F. Zignani, R. Pinghini, E. Centurioni, F. Giorgis, C.F. Pirri, E. Tresso, P. Rava
“Carrier confinement in a-SiN:H multilayer structure for increased light emission”.
Proceedings of the 9th International Conference of Modern Materials and Technologies, Symposium X “Innovative light emitting materials” (1998)

31) G. Ambrosone, U. Coscia, P. Maddalena, M. Ambrico, C. Minarini, S. Esposito, A. Buonanoce, P. Rava.
“Characterization of -Si:H films prepared by PECVD”.
Proceedings of the 17th E.C. Photovoltaic Solar Energy Conference, Munich, October 2001, H.S. Stephens and Associates, Bedford, UK, (2001).